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Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition
Tang, Shujie; Wang, Haomin; Zhang Y(张嵛); Li, Ang; Xie, Hong; Liu, Xiaoyu; Liu LQ(刘连庆); Li, Tianxin; Huang, Fuqiang; Xie, Xiaoming; Jiang, Mianheng
Department机器人学研究室
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
2013
Volume3Pages:1-7
Indexed BySCI
WOS IDWOS:000324382400001
Contribution Rank2
Funding OrganizationNational Science and Technology Major Projects of china [2011ZX02707] ; Chinese Academy of Sciences [KGZD-EW-303] ; CAS International Collaboration and Innovation Program on High Mobility Materials Engineering ; National Natural Science Foundation of China [11104303, 11274333, 11204339, 61136005] ; Science and Technology Commission of Shanghai Municipality [12JC1410100, 12JC1403900]
KeywordScanning-tunneling-microscopy Single-crystal Graphene Zigzag Edges Electronic-properties Suspended Graphene Layer Graphene H-bn Transport Heterostructures Spectroscopy
Abstract

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moire patterns are observed and the sensitivity of moire interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.056. The occurrence of moire pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm(2).V-1.s(-1) at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

Language英语
WOS HeadingsScience & Technology
WOS SubjectMultidisciplinary Sciences
WOS KeywordScanning-tunneling-microscopy ; Single-crystal Graphene ; Zigzag Edges ; Electronic-properties ; Suspended Graphene ; Layer Graphene ; H-bn ; Transport ; Heterostructures ; Spectroscopy
WOS Research AreaScience & Technology - Other Topics
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Document Type期刊论文
Identifierhttp://ir.sia.cn/handle/173321/12561
Collection机器人学研究室
Corresponding AuthorWang, Haomin
Affiliation1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R.China
2.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenhe District, Shenyang 110016, P. R. China
3.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, P. R. China
4.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
Recommended Citation
GB/T 7714
Tang, Shujie,Wang, Haomin,Zhang Y,et al. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition[J]. SCIENTIFIC REPORTS,2013,3:1-7.
APA Tang, Shujie.,Wang, Haomin.,Zhang Y.,Li, Ang.,Xie, Hong.,...&Jiang, Mianheng.(2013).Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition.SCIENTIFIC REPORTS,3,1-7.
MLA Tang, Shujie,et al."Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition".SCIENTIFIC REPORTS 3(2013):1-7.
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