|Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils|
|Gao, Yang; Ren, Wencai; Ma, Teng; Liu, Zhibo; Zhang Y(张嵛); Liu, Wen-Bin; Ma, Lai-Peng; Ma, Xiuliang; Cheng, Hui-Ming
|Source Publication||ACS NANO
|EI Accession number||20132816478522
|Funding Organization||National Science Foundation of China [51172240, 51290273, 50921004, 50972147]; Ministry of Science and Technology of China [2012AA030303]; Chinese Academy of Sciences [KGZD-EW-303-1]
|Keyword||Hexagonal Boron Nitride
Chemical Vapor Deposition
|Abstract||Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications. However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and Integration of novel electronics.|
|WOS Headings||Science & Technology
; Physical Sciences
|WOS Subject||Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; GRAPHENE ELECTRONICS
|WOS Research Area||Chemistry
; Science & Technology - Other Topics
; Materials Science
|Corresponding Author||Ren, Wencai; Cheng, Hui-Ming|
|Affiliation||1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China|
2.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Street, Shenyang 110016, China
Gao, Yang,Ren, Wencai,Ma, Teng,et al. Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils[J]. ACS NANO,2013,7(6):5199-5206.
Gao, Yang.,Ren, Wencai.,Ma, Teng.,Liu, Zhibo.,Zhang Y.,...&Cheng, Hui-Ming.(2013).Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils.ACS NANO,7(6),5199-5206.
Gao, Yang,et al."Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils".ACS NANO 7.6(2013):5199-5206.
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