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题名:
Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide
作者: Zhang Y(张嵛); Liu LQ(刘连庆); Xi N(席宁); Wang YC(王越超); Dong ZL(董再励); Wejinya, Uchechukwu C.
作者部门: 机器人学研究室
关键词: SINGLE-LAYER GRAPHENE ; ELECTRIC-FIELD ; GRAPHITE ; RESOLUTION ; REDUCTION ; PARTICLES ; DEFECTS ; FILMS ; CELLS
刊名: JOURNAL OF APPLIED PHYSICS
ISSN号: 0021-8979
出版日期: 2011
卷号: 110, 期号:11
收录类别: SCI ; EI
产权排序: 1
摘要: A simple and controllable method is developed to experimentally study the effects of defects on reduced graphene oxide (RGO) sheets for nanoelectronics application. First, a deterministic technique is developed to assemble a single layer graphene oxide sheet onto the gaps of microelectrodes by optimizing the dielectrophoretic parameters (10 V(pp) at 1MHz for 5s). This is followed by the utilization of atomic force microscopy-based mechanical cutting method to form line defects on RGO sheets. Based on these two procedures, the experimental studies of the effects of line defects on RGO are investigated, which provides an alternative approach to study the influence of defects on graphene. The electric transport measurement results show that the electrical performance of the defected RGO devices generally decrease due to Anderson localization, which supports the theoretical studies of the influence of defects on the electrical properties of RGO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665212]
语种: 英语
EI收录号: 20121514932162
WOS记录号: WOS:000298254800154
WOS标题词: Science & Technology ; Physical Sciences
类目[WOS]: Physics, Applied
关键词[WOS]: SINGLE-LAYER GRAPHENE ; ELECTRIC-FIELD ; GRAPHITE ; RESOLUTION ; REDUCTION ; PARTICLES ; DEFECTS ; FILMS ; CELLS
研究领域[WOS]: Physics
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内容类型: 期刊论文
URI标识: http://ir.sia.cn/handle/173321/7344
Appears in Collections:机器人学研究室_期刊论文

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Recommended Citation:
Zhang Y,Liu LQ,Xi N,et al. Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide[J]. JOURNAL OF APPLIED PHYSICS,2011,110(11).
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